By Peter W. Hawkes
Advances in Imaging & Electron Physics merges long-running serials-Advances in Electronics & Electron Physics and Advances in Optical & Electron Microscopy. The sequence good points prolonged articles at the physics of electron units (especially semiconductor devices), particle optics at low and high energies, microlithography, picture technology and electronic picture processing, electromagnetic wave propagation, electron microscopy, and the computing tools utilized in a lot of these domains.
- Contributions from top professionals
- Informs and updates on all of the newest advancements within the field
Read or Download Advances in Imaging and Electron Physics, Volume 183 PDF
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Additional info for Advances in Imaging and Electron Physics, Volume 183
Review of Scientiﬁc Instruments, 42, 933–941. Siegmann, H. C. (1994). Recent results of cross fertilization between electron spectroscopy and magnetism. Journal of Electron Spectroscopy and Related Phenomena, 68, 505–514. , & Leuteneger, P. (1998). Silicon drift detectordthe key to new experiments. Naturwissenschaften, 85(11), 539–543. , & Goto, K. (1997). True Auger electron spectra measured with a novel cylindrical mirror analyser (Au, Ag and Cu). Surface and Interface Analysis, 25, 17–24. Tilinin, I.
Barcelona, Spain OECD ISBN 92-64-02301-1, July 4–7, 2006. , & Siegmann, H. C. (1993). Transmission of electrons through ferromagnetic material and applications to detection of electron spin polarization. Annals of Physics (Leipzig), 505, 465–474. Sealy, C. , Castell, M. , & Wilshaw, P. R. (2000). Mechanism for secondary electron dopant contrast in the SEM, Journal of Electron Microscopy, 49, 311–321. Sickafus, E. N. (1971). A secondary emission analog for improved auger spectroscopy with retarding potential analyzers.
0 nm) Ni layer. 7keV. Field of view 600 mm. function of the evaporated ﬁlm with respect to that of the material being imaged, one would still obtain a different SE yield from the two regions. The authors claim that this is due to the establishment of either a Schottky or an ohmic contact between the metal ﬁlm and the semiconductor, which would give rise to a different SE yield. The authors demonstrated this model by reversing the contrast obtained for a given p-n junction when depositing a metallic ﬁlm of a different work function that is either higher or lower than that used in the ﬁrst experiment.